Optimization of various isolation techniques to develop low noise, radiation hard double-sided silicon strip detectors for the CBM Silicon Tracking System

摘要

This paper reports on the design optimization done for Double Sided siliconmicroStrip Detectors(DSSDs) to reduce the Equivalent Noise Charge (ENC) and tomaximize the breakdown voltage and Charge Collection Efficiency. Variousisolation techniques have been explored and a detailed comparison has beenstudied to optimize the detector performance. For the evaluation of theperformance of the silicon detectors, a radiation damage model has beenincluded. The neutron fluence is expected to be 2x10^{13}n_{eq} cm$^{-2}$ peryear for five years of expected CBM run with intermediate periods of warmmaintenance, cold maintenance and shutdown. Transient simulations have beenperformed to estimate the charge collection performance of the irradiateddetectors and simulations have been verified with experimental data.